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Same model may have multiple batches, images only for reference.
IRF730B
Same model may have multiple batches, images only for reference.

IRF730B

Part No IRF730B
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 5.5A TO-220AB
Datasheet
IRF730B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 311pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205311-IRF730B
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF730B CAD Model

Description

The IRF730B is a MOSFET technology electronic component manufactured by Vishay.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 400V
  • Maximum Rds On at Id, Vgs: 1 Ohm @ 3A, 10V
  • Continuous Drain Current at 25°C: 6A (Tc)
  • Mounting Type: Through-hole
  • Dimension: TO-220-3
  • Category: Discrete semiconductor products
  • Used In: Industrial and power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4668 $58.3500
305+ $0.3830 $116.8150
470+ $0.3711 $174.4170
645+ $0.3591 $231.6195
835+ $0.3471 $289.8285
1,115+ $0.3112 $346.9880
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Availability: 1,090 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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