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IRF730SPBF

Name: IRF730SPBF
Brand: Vishay
SKU: 159860
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF730SPBF
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 400V 5.5A D2PAK
Datasheet	IRF730SPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	400V
Continuous Drain Current at 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	38nC @ 10V
Max Input Capacitance	700pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs	1 Ohm @ 3.3A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	D2PAK
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	069351-IRF730SPBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF730SPBF CAD Model

Description

The IRF730SPBF is an N-channel MOSFET manufactured by Vishay.

Power Dissipation: 3.1W
Maximum Drain-Source Breakdown Voltage: 400V
Continuous Drain Current: 5.5A
Gate-Source Threshold Voltage: 4V @ 250µA
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V
Package: D2PAK case/package
Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
50+	$1.1956	$59.7800
120+	$0.9811	$117.7320
185+	$0.9503	$175.8055
255+	$0.9198	$234.5490
325+	$0.8890	$288.9250
435+	$0.7971	$346.7385

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 500 pieces

MOQ: 50 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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