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IRF9510STRL

Part No IRF9510STRL
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET P-CH 100V 4A D2PAK
Sample
Rohs State Need to verify
ECAD Module ECAD

Shipping Information

Shipped from HK warehouse
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Pricing & Ordering $6.9458 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
5+
$10.3980
$51.990
12+
$8.5320
$102.384
19+
$8.2650
$157.035
26+
$7.9990
$207.974
33+
$7.7320
$255.156
44+
$6.9320
$305.008
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 9,800 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 2.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.7nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 200pF at 25V
Power Dissipation (Maximum) 3.7W, 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1187434-IRF9510STRL
Manufacturer Homepage www.vishay.com
Popularity Medium
Fake Threat In the Open Market 61 pct.
Supply and Demand Status Limited

Description

The IRF9510STRL is a P-Channel MOSFET transistor from Vishay Siliconix. It is a Discrete Semiconductor Product and comes in a D2PAK package. The device is obsolete and has a manufacturer pack quantity of 800. The IRF9510STRL has a Vds - Drain-Source Breakdown Voltage of 100V and an Id - Continuous Drain Current of 4A. Its Rds On (Maximum) at Id, Vgs is 1.2Ohm at 2.4A, 10V and Gate Source Voltage(th) (Maximum) at Id is 4V at 250μA. The Gate Charge (Qg) (Maximum) at Vgs is 8.7nC at 10V and the Gate Source Voltage (Maximum) is ±20V. The device has an input capacitance (Ciss) (Maximum) at Vds of 200pF at 25V. Its fake threat in the open market is 61 pct.

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