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Same model may have multiple batches, images only for reference.
IRF840LCPBF Real Image
Same model may have multiple batches, images only for reference.

IRF840LCPBF

Part No IRF840LCPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A TO-220AB
Datasheet
IRF840LCPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 4.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046760-IRF840LCPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF840LCPBF CAD Model

Description

The IRF840LCPBF is an N-channel MOSFET that is mounted in through-hole packaging manufactured by Vishay.

  • Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 8A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 39nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 850 mOhm @ 4.8A, 10V
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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Availability: 60,300 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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