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IRF9Z24SPBF

Part No IRF9Z24SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 11A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 60W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205332-IRF9Z24SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9Z24SPBF CAD Model

Description

The IRF9Z24SPBF is a P-channel MOSFET from Vishay.

  • Mounting: Surface-mount device
  • Package: D2PAK
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Power Dissipation: 3.7W (Ta), 60W (Tc)
  • Maximum Rds On at Id,Vgs: 280 mOhm @ 6.6A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: medium
  • Supply and Demand Status: limited
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Status: active
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8028 $52.1820
155+ $0.6588 $102.1140
240+ $0.6382 $153.1680
325+ $0.6176 $200.7200
420+ $0.5970 $250.7400
565+ $0.5352 $302.3880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 129 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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