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Same model may have multiple batches, images only for reference.
IRFB17N50LPBF Real Image
Same model may have multiple batches, images only for reference.

IRFB17N50LPBF

Part No IRFB17N50LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-220AB
Datasheet
IRFB17N50LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 2760pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 220W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 9.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046804-IRFB17N50LPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB17N50LPBF CAD Model

Description

The Vishay 1046804-IRFB17N50LPBF is an N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 16A @ 25°C.

  • Maximum Power Dissipation: 220W (Tc)
  • Maximum Rds On: 320 mOhm @ 9.9A and 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 130nC @ 10V
  • Maximum Input Capacitance: 2760pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Commonly Used In: Discrete semiconductor products
  • Popularity: Medium
  • Packaging: TO-220AB
  • Dimensions: TO-220-3
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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