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IRFBE30PBF

Part No IRFBE30PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4.1A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017583-IRFBE30PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFBE30
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFBE30PBF CAD Model

Description

The Vishay 017583-IRFBE30PBF is an N-channel MOSFET that is widely used in electronic circuits.

  • Manufacturer: Vishay
  • Supply and Demand Status: balanced
  • Component Design: designed to provide high precision and stability in various applications
  • Type: power dissipation MOSFET
  • Maximum Power Dissipation: 125W (Tc)
  • Reliability and Efficiency: reliable and efficient component that is ideal for use in various electronic devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8315 $54.0475
130+ $0.7789 $101.2570
200+ $0.7526 $150.5200
290+ $0.7000 $203.0000
375+ $0.6737 $252.6375
465+ $0.6473 $300.9945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,965 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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