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IRFBE30S

Name: IRFBE30S
Brand: Vishay
SKU: 604857
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRFBE30S
Manufacturer	Vishay
Catalog	FETs - Single
Description	HEXFET® Power MOSFET \| MOSFET N-CH 800V 4.1A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	800V
Id - Continuous Drain Current	4.1A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	3Ohm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	78nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1300pF at 25V
Power Dissipation (Maximum)	125W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1187545-IRFBE30S
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRFBE30S CAD Model

Alternative Products

Description

The IRFBE30S is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

Package: D2PAK
Number of Leads: 2 + Tab
Applications: Power Supplies, Motor Control Circuits, DC-DC Converters
Status: Obsolete
Supply and Demand: Limited
Operating Temperature Range: -55°C to 150°C
Maximum Power Dissipation: 125W
Vds: 800V
Id: 4.1A
Rds On: 3Ohm @ 2.5A, 10V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
22+	$2.6750	$58.8500
53+	$2.1945	$116.3085
82+	$2.1264	$174.3648
113+	$2.0582	$232.5766
146+	$1.9889	$290.3794
195+	$1.7833	$347.7435

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 400 pieces

MOQ: 22 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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