IRFBE30S

Part No IRFBE30S
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 800V 4.1A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 4.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187545-IRFBE30S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited

Description

The IRFBE30S is an N-channel MOSFET transistor manufactured by Vishay Siliconix. It is available in a D2PAK package with 2 leads and a tab. The device is useful in applications such as power supplies, motor control circuits, and DC-DC converters. The device has an obsolete status and a limited supply and demand status. The device can operate at a temperature range of -55°C to 150°C and has a maximum power dissipation of 125W. The device has a Vds of 800V and Id of 4.1A. The Rds On is 3Ohm at 2.5A and 10V. The device is available on Win Source with part number 1187545-IRFBE30S.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
22+ $2.3160 $50.9520
53+ $1.9000 $100.7000
82+ $1.8410 $150.9620
113+ $1.7820 $201.3660
146+ $1.7220 $251.4120
195+ $1.5440 $301.0800
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 400 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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