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Same model may have multiple batches, images only for reference.
IRFBF20STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBF20STRRPBF

Part No IRFBF20STRRPBF
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 900V 1.7A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 1.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 490pF at 25V
Power Dissipation (Maximum) 3.1W, 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1187549-IRFBF20STRRPBF
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBF20STRRPBF CAD Model

Description

The IRFBF20STRRPBF is an N-Channel MOSFET that is designed for use in various applications.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
  • Vds - Drain-Source Breakdown Voltage: 900V
  • Id - Continuous Drain Current: 1.7A
  • Rds On (Maximum) @ Id, Vgs: 8Ohm @ 1A, 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 490pF @ 25V
  • Supply and Demand Status: Balanced
  • Packaging: Tape and Reel
  • Manufacturer Pack Quantity: 800

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