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Same model may have multiple batches, images only for reference.
IRFIBC30GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIBC30GPBF

Part No IRFIBC30GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.5A TO220FP
Datasheet
IRFIBC30GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 124518-IRFIBC30GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIBC30GPBF CAD Model

Description

The Vishay 124518-IRFIBC30GPBF is an N-channel MOSFET suitable for use in various applications.

  • Maximum Power Dissipation: 35W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220-3
  • Maximum Rds On: 2.2 Ohm @ 1.5A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5154 $60.6160
95+ $1.2435 $118.1325
145+ $1.2046 $174.6670
200+ $1.1658 $233.1600
260+ $1.1268 $292.9680
345+ $1.0103 $348.5535
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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