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IRFP9140

Part No IRFP9140
Manufacturer Vishay
Catalog FETs - Single
Description P-CHANNEL POWER MOSFETS | MOSFET P-CH 100V 21A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 21A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 61nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1400pF at 25V
Power Dissipation (Maximum) 180W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187809-IRFP9140
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP9140 CAD Model

Description

The IRFP9140 is a MOSFET semiconductor device manufactured by Vishay Siliconix.

  • Win Source Part Number: 1187809-IRFP9140
  • Supply and Demand Status: Balanced
  • Manufacturer Homepage: www.samsung.com/Products/Semiconductor
  • Status: Obsolete
  • Manufacturer Package: TO-247-3
  • Power Dissipation (Maximum): 180W
  • Operating Temperature: -55°C ~ 175°C
  • Manufacturer Pack Quantity: 25
  • MSL Level: 1 (Unlimited)
  • Vds - Drain-Source Breakdown Voltage: 100V
  • Id - Continuous Drain Current: 21A
  • Rds On (Maximum) @ Id, Vgs: 200mOhm @ 13A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 61nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1400pF @ 25V

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