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Same model may have multiple batches, images only for reference.
IRFR020TR Real Image
Same model may have multiple batches, images only for reference.

IRFR020TR

Part No IRFR020TR
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 60V 14A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 8.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 640pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187845-IRFR020TR
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR020TR CAD Model

Description

The Vishay Siliconix IRFR020TR is a MOSFET transistor with an N-channel polarity.

  • Product Type: MOSFET Transistor
  • Channel Polarity: N-Channel
  • Package: D-Pak (SC-63)
  • Packaging: Tape and Reel
  • Mounting Style: SMD
  • Drive Voltage: 10V
  • Product Status: Obsolete
  • Temperature Range: -55°C to 150°C
  • Power Dissipation: 2.5W or 42W
  • Vds (Drain-Source Breakdown Voltage): 60V
  • Id (Continuous Drain Current): 14A
  • Rds On (Maximum) @ Id, Vgs: 100mOhm @ 8.4A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) @ Vds: 640pF @ 25V

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