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IRFR9210TRLPBF

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Part No	IRFR9210TRLPBF
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET P-CH 200V 1.9A DPAK
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tape and Reel
Transistor Polarity	P-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	200V
Id - Continuous Drain Current	1.9A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	3Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	8.9nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	170pF at 25V
Power Dissipation (Maximum)	2.5W, 25W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	D-Pak
Manufacturer Package	TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Win Source Part Number	753746-IRFR9210TRLPBF
Popularity	Low
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRFR9210TRLPBF CAD Model

Alternative Products

Description

The Vishay Siliconix IRFR9210TRLPBF is a MOSFET transistor with P-channel polarity.

Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range: -55°C to 150°C
Power Dissipation (Maximum): 2.5W, 25W
Popularity: Low
Supply and Demand Status: Balanced
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 1.9A
Rds On (Maximum) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 8.9nC @ 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) @ Vds: 170pF @ 25V

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