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Same model may have multiple batches, images only for reference.
IRFU1N60APBF Real Image
Same model may have multiple batches, images only for reference.

IRFU1N60APBF

Part No IRFU1N60APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.4A I-PAK
Datasheet
IRFU1N60APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 229pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 7 Ohm @ 840mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040376-IRFU1N60APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU1N60APBF CAD Model

Description

The Vishay MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 600V.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.4A @ 25°C
  • Maximum Power Dissipation: 36W (Tc)
  • Technology: Through Hole
  • Package: TO-251AA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds on @ Id, Vgs: 7 Ohm @ 840mA, 10V
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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