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Same model may have multiple batches, images only for reference.
IRFZ14SPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ14SPBF

Part No IRFZ14SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A D2PAK
Datasheet
IRFZ14SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 127136-IRFZ14SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ14SPBF CAD Model

Description

The IRFZ14SPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
  • Continuous Drain Current: 10A (Tc) @ 25°C
  • Package: D2PAK
  • Mounting: SMD (SMT)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 300pF @ 25V
  • Maximum Rds On @ Id,Vgs: 200 mOhm @ 6A, 10V
  • Drain-Source Breakdown Voltage: 60V
  • Supply and demand status: currently in balance

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