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IRLR014PBF

Part No IRLR014PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 7.7A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 8.4nC @ 5V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 4.6A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017783-IRLR014PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLR014PBF CAD Model

Description

The Vishay IRLR014PBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 7.7A at 25°C.

  • Maximum Rds On: 200 mOhm @ 4.6A and 5V
  • Maximum Gate-Source Voltage: ±10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Input Capacitance: 400pF @ 25V
  • Maximum Gate Charge: 8.4nC @ 5V
  • Power Dissipation: 2.5W (Ta) and 25W (Tc)
  • Case/Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.3135 $55.8810
14+ $7.6418 $106.9852
21+ $7.4030 $155.4630
28+ $7.1642 $200.5976
37+ $6.9254 $256.2398
49+ $6.2090 $304.2410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 840 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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