The IRLR120 is an N-channel MOSFET transistor designed for use in power management.

• Vds - Drain-Source Breakdown Voltage: 100V
• Id - Continuous Drain Current: 7.7A
• Rds On (Maximum) @ Id, Vgs: 270mOhm @ 4.6A, 5V
• Gate Source Voltage(th) (Maximum) @ Id: 2V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 5V
• Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 25V
• Gate Source Voltage (maximum): ±10V
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Power Dissipation (maximum): 2.5W (42W)

The device is manufactured by Vishay Siliconix and comes in D-Pak (2 Leads + Tab), SC-63 package. The device comes in tube packaging. The supply and demand status is sufficient.