The MMBT3904-GS08 is a general-purpose NPN bipolar junction transistor (BJT) from Vishay Semiconductors. It is designed for use in a wide range of low-power amplification and switching applications. This transistor is commonly used in circuits requiring a small signal NPN transistor with moderate gain and voltage characteristics.

Applications:

• General-purpose amplification
• Low-power switching
• Driver stages
• Oscillator circuits
• Digital logic circuits

Features:

• NPN Transistor
• Low Collector-Emitter Saturation Voltage
• High Current Gain (hFE)
• Surface Mount Device (SMD)
• Lead Free / RoHS Compliant

Benefits:

• The MMBT3904-GS08 offers reliable performance in various amplifier and switching circuits.
• Its high current gain allows for efficient amplification of small signals.
• The low saturation voltage minimizes power dissipation in switching applications.
• The small surface mount package allows for high-density circuit designs.
• Compliance with RoHS standards ensures environmental friendliness.

Technical Specifications:

The MMBT3904-GS08 has a collector-emitter voltage (VCEO) of 40V, a collector current (IC) of 200mA, and a power dissipation of 350mW. Its typical current gain (hFE) ranges from 100 to 300, depending on the operating conditions. The operating and storage junction temperature range is -55°C to +150°C.

This transistor is available in a SOT-23 package, which is suitable for automated assembly processes and compact circuit designs. The MMBT3904-GS08 is widely used in commercial and industrial applications due to its versatility and cost-effectiveness.