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Same model may have multiple batches, images only for reference.
SI1034X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1034X-T1-E3

Part No SI1034X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.18A SOT563F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 180mA
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 0.75nC @ 4.5V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 112459-SI1034X-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1034X-T1-E3 CAD Model

Description

The Vishay SI1034X-T1-E3 is a dual N-channel MOSFET designed for use in a variety of applications, including power supplies, motor control, and battery management systems.

  • Manufacturer: Vishay
  • Product Name: SI1034X-T1-E3
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 20V
  • Feature: Logic level gate
  • Package: SC-89-6
  • Supplied on: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,385+ $0.1213 $289.3005
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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