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Same model may have multiple batches, images only for reference.
SI1079X-T1-GE3
Same model may have multiple batches, images only for reference.

SI1079X-T1-GE3

Part No SI1079X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI1079X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.44A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 15 V
Power Dissipation (Max) 330mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-89-6
Package / Case SOT-563, SOT-666
Base Product Number SI1079
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277903-SI1079X-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI1079X-T1-GE3 CAD Model

Description

The SI1079X-T1-GE3 is a P-Channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 1.44A @ 25°C (Ta)
  • Maximum On-Resistance: 100mOhm @ 1.4A and 4.5V gate-source voltage
  • Gate-Source Voltage Threshold: 1.5V @ 250μA
  • Maximum Power Dissipation: 330mW @ 25°C (Ta)
  • Package: SOT-563, SOT-666
  • Gate Charge: 26nC @ 10V
  • Input Capacitance: 750pF @ 15V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Ideal for: Use in power management applications

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