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SI1300BDL-T1-E3

Part No SI1300BDL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 0.4A 3-Pin SC-70 T/R / MOSFET N-CH 20V 400MA SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.84nC @ 4.5V
Max Input Capacitance 35pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 190mW (Ta), 200mW (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 250mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 122234-SI1300BDL-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si1300BDL
Introduction Date December 02, 2005
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI1300BDL-T1-E3 CAD Model

Description

This MOSFET electronic component is manufactured by Vishay and has a Win Source Part Number of 122234-SI1300BDL-T1-E3.

  • Supply and Demand: Balanced
  • Technology: N-Channel
  • Power Dissipation: 190mW (Ta), 200mW (Tc)
  • Status: Obsolete (EOL)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: SC-70-3
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 850 mOhm @ 250mA, 4.5V
  • Technical Support: Available upon request

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 119,838 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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