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SI1302DL-T1-E3

Part No SI1302DL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 0.6A 3-Pin SC-70 T/R / MOSFET N-CH 30V 600MA SOT323-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 1.4nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 280mW (Ta)
Maximum Rds On at Id,Vgs 480 mOhm @ 600mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 028340-SI1302DL-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si1302DL
Introduction Date October 24, 2000
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI1302DL-T1-E3 CAD Model

Description

The Vishay SI1302DL-T1-E3 is a high-popularity MOSFET that is designed to provide reliable performance.

  • Power Dissipation: 280mW
  • Operating Temperature: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 600mA @ 25°C
  • Supply and Demand: Limited
  • Applications: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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