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FQD1N80TM

Part No FQD1N80TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 1A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 7.2nC @ 10V
Max Input Capacitance 195pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 20 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 067399-FQD1N80TM
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Lighting
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD1N80TM CAD Model

Description

The FQD1N80TM is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Win Source Part Number: 067399-FQD1N80TM
  • Applications: Industrial, Power Management, Lighting
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6452 $51.6160
190+ $0.5294 $100.5860
295+ $0.5128 $151.2760
405+ $0.4963 $201.0015
525+ $0.4797 $251.8425
700+ $0.4301 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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