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SI1400DL-T1-GE3

Part No SI1400DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.6A SC-70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 568mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095681-SI1400DL-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1400DL-T1-GE3 CAD Model

Description

The SI1400DL-T1-GE3 is an N-channel MOSFET from Vishay.

  • Product Category: Discrete Semiconductor Products
  • Mounting Type: SMD (SMT)
  • Package / Case: SC-70-6 (SOT-363)
  • Power Dissipation: 568mW
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.6A @ 25°C
  • Gate-Source Threshold Voltage: 600mV @ 250μA
  • Gate Charge: 4nC @ 4.5V
  • Rds On (Max) @ Id,Vgs: 150 mOhm @ 1.7A, 4.5V
  • Packaging: Reel - TR

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