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Same model may have multiple batches, images only for reference.
SI1426DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1426DH-T1-GE3

Part No SI1426DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.8A SC-70-6
Datasheet
SI1426DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 3nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 75 mOhm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 115046-SI1426DH-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si1426DH
Introduction Date February 14, 2002
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SI1426DH-T1-GE3 CAD Model

Description

The SI1426DH-T1-GE3 is a N-channel MOSFET from Vishay.

  • Category: discrete semiconductor product
  • Popularity: high
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.8A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 3nC @ 4.5V
  • Maximum Rds On: 75 mOhm @ 3.6A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
450+ $0.1294 $58.2300
1,090+ $0.1063 $115.8670
1,690+ $0.1028 $173.7320
2,330+ $0.0993 $231.3690
3,015+ $0.0959 $289.1385
4,000+ $0.0866 $346.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,600 pieces
MOQ: 450 pcs
Order Increment : 1 pcs
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