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SI1470DH-T1-E3

Part No SI1470DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.1A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 7.5nC @ 5V
Max Input Capacitance 510pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 66 mOhm @ 3.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095697-SI1470DH-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1470DH-T1-E3 CAD Model

Description

The Vishay SI1470DH-T1-E3 is an N-channel MOSFET that has a power dissipation (Max) of 1.5W (Ta), 2.8W (Tc).

  • Mounting Technology: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Category: discrete semiconductor product
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5.1A (Tc)
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Gate Charge (Max): 7.5nC @ 5V
  • Gate-Source Voltage (Max): ±12V
  • Rds On (Max) @ Id,Vgs: 66 mOhm @ 3.8A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.7836 $52.9704
33+ $3.1045 $102.4485
50+ $3.0075 $150.3750
69+ $2.9105 $200.8245
89+ $2.8135 $250.4015
119+ $2.5224 $300.1656
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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