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Same model may have multiple batches, images only for reference.
SI1499DH-T1-BE3 Vishay
Same model may have multiple batches, images only for reference.

SI1499DH-T1-BE3

Part No SI1499DH-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 1.6A/1.6A SC70-6 / P-Channel 8 V 1.6A (Ta), 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6
Datasheet
SI1499DH-T1-BE3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta), 1.6A (Tc)
Rds On (Max) @ Id, Vgs 78mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 4 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 2.78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number SI1499
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356551-SI1499DH-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI1499DH-T1-BE3 CAD Model

Description

The SI1499DH-T1-BE3 is a P-Channel MOSFET transistor from Vishay Siliconix.

  • Series: TrenchFET
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain to Source Voltage (Vdss): 8V
  • Continuous Drain Current (Id): 1.6A @ 25°C
  • On-Resistance (Rds On): 78mOhm @ 2A and 4.5V
  • Gate-Source Voltage (Vgs): ±5V
  • Gate Charge (Qg): 16nC @ 4.5V
  • Mounting Type: Surface Mount
  • Package: 6-TSSOP, SC-88, SOT-363

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Quantity Unit Price Ext. Price
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365+ $0.3206 $117.0190
560+ $0.3107 $173.9920
770+ $0.3007 $231.5390
995+ $0.2906 $289.1470
1,330+ $0.2606 $346.5980
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