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Same model may have multiple batches, images only for reference.
SI1553DL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1553DL-T1-GE3

Part No SI1553DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SC70-6
Datasheet
SI1553DL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 660mA, 410mA
Maximum Rds On at Id,Vgs 385 mOhm @ 660mA, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 1.2nC @ 4.5V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095704-SI1553DL-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1553DL-T1-GE3 CAD Model

Description

The SI1553DL-T1-GE3 is an N and P-channel FET with a logic level gate manufactured by Vishay.

  • Power Dissipation: 270mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 660mA and 410mA
  • Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
  • Maximum Gate Charge: 1.2nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 385 mOhm @ 660mA, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3130 $57.9050
450+ $0.2576 $115.9200
695+ $0.2495 $173.4025
960+ $0.2414 $231.7440
1,240+ $0.2333 $289.2920
1,660+ $0.2091 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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