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Same model may have multiple batches, images only for reference.
SI1917EDH-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI1917EDH-T1-E3

Part No SI1917EDH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 1A SC70-6
Datasheet
SI1917EDH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 1A
Maximum Rds On at Id,Vgs 370 mOhm @ 1A, 4.5V
Gate-Source Threshold Voltage 450mV @ 100μA (Min)
Max Gate Charge 2nC @ 4.5V
Maximum Power Dissipation 570mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 104048-SI1917EDH-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1917EDH-T1-E3 CAD Model

Description

The Vishay SI1917EDH-T1-E3 is a high-quality dual P-channel FET that is designed for use in discrete semiconductor products.

  • Gate Feature: Logic level gate
  • Product Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 570mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 1A
  • Gate-Source Threshold Voltage: 450mV @ 100μA (Min)
  • Maximum Gate Charge: 2nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 370 mOhm @ 1A, 4.5V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
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Availability: 7,361 pieces
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