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Same model may have multiple batches, images only for reference.
SI1965DH-E3 Vishay
Same model may have multiple batches, images only for reference.

SI1965DH-E3

Part No SI1965DH-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 1.3A SC70-6
Datasheet
SI1965DH-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 390 mOhm @ 1A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.2nC @ 8V
Max Input Capacitance 120pF @ 6V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 064388-SI1965DH-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1965DH-E3 CAD Model

Description

The Vishay 064388-SI1965DH-E3 is a 2 P-Channel (Dual) FET with a Logic Level Gate feature.

  • Category: Discrete Semiconductor Product
  • Market Status: Active
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 1.3A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 4.2nC @ 8V
  • Maximum Input Capacitance: 120pF @ 6V
  • Maximum Rds On @ Id,Vgs: 390 mOhm @ 1A, 4.5V
  • Supply and Demand Status: Balanced

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