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Same model may have multiple batches, images only for reference.
SI2302ADS-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI2302ADS-T1-GE3

Part No SI2302ADS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.1A SOT23-3
Datasheet
SI2302ADS-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 50μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 300pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095725-SI2302ADS-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI2302ADS-T1-GE3 CAD Model

Description

Vishay's MOSFET is an N-channel polarity type with a drain-source breakdown voltage of 20V and a continuous drain current of 2.1A @ 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.1A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 50μA
  • Maximum Gate Charge: 10nC @ 4.5V
  • Maximum Input Capacitance: 300pF @ 10V
  • Maximum Rds On @ Id,Vgs: 60 mOhm @ 3.6A, 4.5V
  • Mounted: on a SMD (SMT) package
  • Categorized as: a discrete semiconductor product.
  • Supply and demand status: sufficient, despite its obsolete (EOL) status.

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