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SI2305ADS-T1-E3

Part No SI2305ADS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 8V 5.4A 3-Pin SOT-23 T/R / MOSFET P-CH 8V 5.4A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 740pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.1A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 114120-SI2305ADS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Portable Devices
Family Name Si2305ADS
Introduction Date February 07, 2008
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI2305ADS-T1-E3 CAD Model

Description

The SI2305ADS-T1-E3 is a MOSFET technology-based electronic component manufactured by Vishay.

  • Supply and Demand Status: Balanced
  • Component Family: FETs - Single
  • Maximum Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current: 5.4A @ 25°C
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds on @ Id,Vgs: 40 mOhm @ 4.1A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0668 $58.6740
135+ $0.8754 $118.1790
205+ $0.8480 $173.8400
285+ $0.8207 $233.8995
365+ $0.7933 $289.5545
490+ $0.7112 $348.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,216 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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