The SI2318CDS-T1-BE3 is an N-Channel MOSFET transistor from Vishay Siliconix.

• It features a drain to source voltage of 40V, a continuous drain current of 4.3A (Ta), 5.6A (Tc), and an Rds On (Max) @ Id, Vgs of 42mOhm @ 4.3A, 10V.
• The device comes in a TO-236-3, SC-59, SOT-23-3 package and has a gate charge (Qg) (Max) @ Vgs of 9 nC @ 10 V.
• The SI2318CDS-T1-BE3 is ideal for use in applications such as power management, load switching, and battery protection.
• With a temperature range of -55°C to 150°C (TJ), this MOSFET transistor is suitable for use in a wide range of environments.