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SI2319CDS-T1-GE3

Part No SI2319CDS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 4.4A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 595pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 77 mOhm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028385-SI2319CDS-T1-GE3
Family Name Si2319CDS
Introduction Date January 19, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2319CDS-T1-GE3 CAD Model

Description

The Vishay Si2319CDS-T1-GE3 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.25W (Ta) and 2.5W (Tc)
  • Continuous Drain Current: 4.4A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 40V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 77 mOhm @ 3.1A, 10V
  • Package: SOT-23-3 (TO-236)
  • Halogen-Free Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2359 $50.7185
455+ $0.2209 $100.5095
705+ $0.2135 $150.5175
1,010+ $0.1986 $200.5860
1,310+ $0.1911 $250.3410
1,635+ $0.1836 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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