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Same model may have multiple batches, images only for reference.
SI2323DS-T1-BE3 Real Image
Same model may have multiple batches, images only for reference.

SI2323DS-T1-BE3

Part No SI2323DS-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL 20-V (D-S) MOSFET / P-Channel 20 V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 39mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 10 V
Power Dissipation (Max) 750mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1349126-SI2323DS-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI2323DS-T1-BE3 CAD Model

Description

The SI2323DS-T1-BE3 is a P-channel MOSFET transistor from Vishay Siliconix that features a drain-to-source voltage of 20 V.

  • Drain-to-Source Voltage: 20 V
  • Continuous Drain Current: 3.7 A
  • Maximum Power Dissipation: 750mW
  • Mounting: Surface Mount
  • Standard Package: 3,000
  • Gate-Source Voltage: ±8V
  • Operating Temperature: -55°C to 150°C
  • Product Category: Discrete Semiconductor Products (Transistors, FETs, MOSFETs, Single FETs)

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