The Vishay 1095740-SI2325DS-T1-E3 is a P-Channel MOSFET that is widely used in industrial power management applications.

• Package: SOT-23-3 (TO-236)
• Maximum Power Dissipation: 750mW (Ta)
• Drain-Source Breakdown Voltage: 150V
• Continuous Drain Current: 530mA (Ta) @ 25°C
• Gate-Source Threshold Voltage: 4.5V @ 250μA
• Maximum Gate Charge: 12nC @ 10V
• Maximum Rds On @ Id,Vgs: 1.2 Ohm @ 500mA, 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Input Capacitance: 510pF @ 25V
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Temperature Range: -55°C to 150°C (TJ)