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SI2335DS-T1-GE3

Part No SI2335DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3.2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1225pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 51 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028391-SI2335DS-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2335DS-T1-GE3 CAD Model

Description

The SI2335DS-T1-GE3 is a P-channel MOSFET manufactured by Vishay.

  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 750mW (Ta)
  • Drive Voltage: 1.8V for max Rds On and 4.5V for min Rds On
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 3.2A @ 25°C
  • Maximum Rds On @ Id, Vgs: 51 mOhm @ 4A, 4.5V
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Input Capacitance: 1225pF @ 6V
  • Temperature Range for Operating: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
635+ $0.0912 $57.9120
1,540+ $0.0751 $115.6540
2,385+ $0.0728 $173.6280
3,280+ $0.0705 $231.2400
4,240+ $0.0681 $288.7440
5,665+ $0.0612 $346.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 635 pcs
Order Increment : 1 pcs
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