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Same model may have multiple batches, images only for reference.
SI2351DS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2351DS-T1-E3

Part No SI2351DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.8A SOT23-3
Datasheet
SI2351DS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5.1nC @ 5V
Max Input Capacitance 250pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1W (Ta), 2.1W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 142282-SI2351DS-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI2351DS-T1-E3 CAD Model

Description

The Vishay SI2351DS-T1-E3 is a P-Channel MOSFET electronic component that is obsolete (EOL).

  • Applications: Industrial and power management
  • Maximum Power Dissipation: 1W (Ta), 2.1W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Package: SOT-23-3 (TO-236)
  • Dimension: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
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Availability: 3,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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