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Same model may have multiple batches, images only for reference.
SI3442CDV-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI3442CDV-T1-GE3

Part No SI3442CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 8A 6TSOP
Datasheet
SI3442CDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 335pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095827-SI3442CDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3442CDV-T1-GE3 CAD Model

Description

Vishay SI3442CDV-T1-GE3 is an N-channel MOSFET that is designed for high-performance applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8A (Tc)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 335pF @ 10V
  • Maximum Rds On @ Id, Vgs: 27 mOhm @ 6.5A, 10V
  • Package: 6-TSOP
  • Mounting Type: Surface Mount
  • Supply and Demand: Balanced
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SOT-23-6 Thin, TSOT-23-6
  • ECCN: EAR99
  • Dimension and Polarity: SMD (SMT) and N-channel, respectively

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