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Same model may have multiple batches, images only for reference.
SI1426DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1426DH-T1-E3

Part No SI1426DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.8A SC70-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 3nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 75 mOhm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 120737-SI1426DH-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1426DH-T1-E3 CAD Model

Description

The Vishay 120737-SI1426DH-T1-E3 is a discrete semiconductor product that is an N-channel MOSFET.

  • Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id, Vgs: 75 mOhm @ 3.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 3nC @ 4.5V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Mounting: SMD (SMT)
  • Package: reel-TR

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Quantity Unit Price Ext. Price
360+ $0.1617 $58.2120
870+ $0.1328 $115.5360
1,340+ $0.1294 $173.3960
1,855+ $0.1247 $231.3185
2,385+ $0.1213 $289.3005
3,195+ $0.1086 $346.9770
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Availability: 27,000 pieces
MOQ: 360 pcs
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