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Same model may have multiple batches, images only for reference.
SI3442DV-T1 Vishay
Same model may have multiple batches, images only for reference.

SI3442DV-T1

Part No SI3442DV-T1
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 20V 4.1A SSOT-6
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Rds On (Max) @ Id, Vgs 60 mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) @ Vgs 14nC @ 4.5V
Input Capacitance (Ciss) @ Vds 365pF @ 10V
Power - Max 800mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package SOT-23-6 Thin, TSOT-23-6
Manufacturer Device Package SuperSOT-6
Win Source Part Number 189795-SI3442DV-T1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3442DV-T1 CAD Model

Description

The Vishay SI3442DV-T1 is an N-channel MOSFET transistor with a maximum drain to source voltage of 20V and a continuous drain current of 4.1A at 25°C.

  • Rds On (Max): 60 mOhm @ 4.1A, 4.5V
  • Vgs(th) (Max): 1V @ 250μA
  • Gate Charge: 14nC @ 4.5V
  • Input Capacitance: 365pF @ 10V
  • Operating Temperature Range: -55°C to 150°C
  • Package: SOT-23-6 Thin or TSOT-23-6
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
240+ $0.2428 $58.2720
580+ $0.1993 $115.5940
900+ $0.1930 $173.7000
1,240+ $0.1868 $231.6320
1,600+ $0.1806 $288.9600
2,140+ $0.1619 $346.4660
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