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Same model may have multiple batches, images only for reference.
SI3443DDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3443DDV-T1-GE3

Part No SI3443DDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHAN 20V TSOP6S
Datasheet
SI3443DDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta), 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 30nC @ 8V
Max Input Capacitance 970pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Maximum Rds On at Id,Vgs 47 mOhm @ 4.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095828-SI3443DDV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3443DDV-T1-GE3 CAD Model

Description

The Vishay SI3443DDV-T1-GE3 is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 1.7W (Ta) and 2.7W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 30nC @ 8V
  • Maximum Input Capacitance: 970pF @ 10V
  • Maximum Rds On at Id,Vgs: 47 mOhm @ 4.5A, 4.5V
  • Packaging: 6-TSOP
  • Dimensions: SOT-23-6 Thin, TSOT-23-6
  • Suitable for: Power management and load switching

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1731 $50.1990
705+ $0.1421 $100.1805
1,095+ $0.1376 $150.6720
1,505+ $0.1332 $200.4660
1,945+ $0.1288 $250.5160
2,600+ $0.1154 $300.0400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 156,861 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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