The SI3443DV-T1-E3 is a P-Channel 30 V (D-S) MOSFET from Vishay. This MOSFET is designed for efficient power management applications like load switching and DC-DC conversion in portable devices. The -E3 suffix indicates RoHS compliance and halogen-free construction.

Applications:

• Load Switching
• Power Management in Portable Devices
• DC-DC Conversion
• Battery Management Systems

Features:

• Low On-Resistance: Reduces power loss and increases efficiency.
• Low Threshold Voltage: Suitable for low voltage applications.
• Compact Size: Allows for high-density board designs.
• TrenchFET® Power MOSFET Technology: Delivers excellent switching performance.
• RoHS Compliant and Halogen-Free: Environmentally friendly.

Benefits:

• Increased Efficiency: Minimizes power dissipation due to low on-resistance.
• Longer Battery Life: Efficient switching extends battery life in portable devices.
• Smaller Board Size: Compact footprint enables space-saving designs.
• Improved Thermal Management: Efficient power dissipation reduces heat generation.
• Environmentally Safe: RoHS compliance and halogen-free materials minimize environmental impact.

Technical Specifications:

The SI3443DV-T1-E3 has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The typical on-resistance (RDS(on)) at VGS = -4.5V is 0.055 Ohms, and at VGS = -2.5V, it is 0.090 Ohms. The continuous drain current (ID) is -3.5A. The device is available in a PowerPAK® SC-70 package for efficient heat dissipation and small size. The operating temperature range is -55°C to +150°C.

The TrenchFET® technology in the SI3443DV-T1-E3 optimizes the MOSFET for low on-resistance and fast switching speeds, making it suitable for high-frequency switching applications. Its low gate charge also contributes to its efficiency. The PowerPAK® SC-70 package allows for efficient heat dissipation, ensuring reliable performance even at higher power levels.