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SI3445DV-T1-GE3 Real Image1 SI3445DV-T1-GE3 Real Image2
Same model may have multiple batches, images only for reference.
SI3445DV-T1-GE3 Real Image1 SI3445DV-T1-GE3 Real Image2
SI3445DV-T1-GE3 Real Image1 SI3445DV-T1-GE3 Real Image2
Same model may have multiple batches, images only for reference.

SI3445DV-T1-GE3

Part No SI3445DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 6-TSOP
Datasheet
SI3445DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 099576-SI3445DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3445DV-T1-GE3 CAD Model

Description

The Vishay SI3445DV-T1-GE3 is an obsolete (EOL) MOSFET electronic component with a P-Channel polarity.

  • Maximum Power Dissipation: 2W (Ta)
  • Maximum Rds On: 42 mOhm @ 5.6A, 4.5V
  • Supply and Demand Status: sufficient
  • Package: reel-TR
  • Mounting: SMD (SMT) technology

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