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Same model may have multiple batches, images only for reference.
SI3456BDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3456BDV-T1-GE3

Part No SI3456BDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.5A 6-TSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064447-SI3456BDV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3456BDV-T1-GE3 CAD Model

Description

The Vishay 064447-SI3456BDV-T1-GE3 is a N-channel MOSFET electronic component with a drain-source breakdown voltage of 30V and a continuous drain current of 4.5A (Ta) @ 25°C.

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3222 $57.9960
440+ $0.2645 $116.3800
680+ $0.2564 $174.3520
935+ $0.2483 $232.1605
1,210+ $0.2391 $289.3110
1,615+ $0.2148 $346.9020
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Availability: 8,190 pieces
MOQ: 180 pcs
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