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Same model may have multiple batches, images only for reference.
SI3460DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3460DV-T1-GE3

Part No SI3460DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5.1A 6TSOP
Datasheet
SI3460DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 1mA (Min)
Max Gate Charge 20nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095842-SI3460DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI3460DV-T1-GE3 CAD Model

Description

The Vishay SI3460DV-T1-GE3 MOSFET is a N-Channel power MOSFET with a Drain-Source Breakdown Voltage of 20V and a Continuous Drain Current of 5.1A @ 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.1A @ 25°C
  • Gate-Source Threshold Voltage: 450mV
  • Max Gate Charge: 20nC @ 4.5V
  • Maximum Rds On: 27 mOhm @ 5.1A and 4.5V
  • Package: 6-TSOP
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Drive Voltage: 1.8V and 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3905 $62.5725
105+ $1.1411 $119.8155
160+ $1.1053 $176.8480
220+ $1.0697 $235.3340
280+ $1.0341 $289.5480
375+ $0.9270 $347.6250
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Availability: 56,000 pieces
MOQ: 45 pcs
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