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Same model may have multiple batches, images only for reference.
SI3493BDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3493BDV-T1-GE3

Part No SI3493BDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8A 6-TSOP
Datasheet
SI3493BDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 43.5nC @ 5V
Max Input Capacitance 1805pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.08W (Ta), 2.97W (Tc)
Maximum Rds On at Id,Vgs 27.5 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064456-SI3493BDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI3493BDV-T1-GE3 CAD Model

Description

The Vishay 064456-SI3493BDV-T1-GE3 MOSFET is a high-performance, reliable component that is designed for use in a variety of electronic devices.

  • Polarity: P-Channel
  • Maximum Power Dissipation: 2.08W (Ta), 2.97W (Tc)
  • Package Type: SMD (SMT)
  • Package/Case: 6-TSOP
  • Win Source Part Number: 064456-SI3493BDV-T1-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5252 $52.5200
235+ $0.4310 $101.2850
360+ $0.4175 $150.3000
500+ $0.4040 $202.0000
645+ $0.3906 $251.9370
860+ $0.3502 $301.1720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 142,394 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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