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Same model may have multiple batches, images only for reference.
SI3586DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3586DV-T1-E3

Part No SI3586DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 2.9A 6TSOP
Datasheet
SI3586DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A, 2.1A
Maximum Rds On at Id,Vgs 60 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 6nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 115049-SI3586DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3586DV-T1-E3 CAD Model

Description

This electronic component is an N and P-channel FET type manufactured by Vishay.

  • Gate Feature: Logic Level Gate
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 6-TSOP
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 2.9A, 2.1A
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Gate Charge: 6nC @ 4.5V
  • Maximum Input Capacitance: N/A
  • Maximum Rds On at Id,Vgs: 60 mOhm @ 3.4A, 4.5V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1767 $58.3110
795+ $0.1455 $115.6725
1,230+ $0.1409 $173.3070
1,695+ $0.1363 $231.0285
2,195+ $0.1317 $289.0815
2,945+ $0.1178 $346.9210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 330 pcs
Order Increment : 1 pcs
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