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Same model may have multiple batches, images only for reference.
SI3586DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3586DV-T1-GE3

Part No SI3586DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 2.9A 6-TSOP
Datasheet
SI3586DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A, 2.1A
Maximum Rds On at Id,Vgs 60 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 6nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 100848-SI3586DV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3586DV-T1-GE3 CAD Model

Description

The Vishay SI3586DV-T1-GE3 is an N and P-channel FET that features a logic level gate.

  • Application: High-speed switching
  • On-Resistance: Low
  • Switching Speed: Fast
  • Mounting: Surface-mount device
  • Package: 6-TSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2657 $58.4540
530+ $0.2183 $115.6990
820+ $0.2114 $173.3480
1,130+ $0.2044 $230.9720
1,455+ $0.1987 $289.1085
1,950+ $0.1779 $346.9050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 102,900 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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