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Same model may have multiple batches, images only for reference.
SI3590DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3590DV-T1-GE3

Part No SI3590DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 2.5A 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.5A, 1.7A
Maximum Rds On at Id,Vgs 77 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 211631-SI3590DV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si3590DV
Introduction Date November 01, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI3590DV-T1-GE3 CAD Model

Description

The Vishay SI3590DV-T1-GE3 is an N and P-channel FET that comes in a 6-TSOP case/package.

  • Gate Feature: Logic Level Gate FET
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 2.5A, 1.7A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge: 4.5nC @ 4.5V
  • Maximum Rds On at Id, Vgs: 77 mOhm @ 3A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Estimated Active Until: 2027
  • Halogen-Free: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5747 $51.7230
215+ $0.4715 $101.3725
330+ $0.4568 $150.7440
455+ $0.4421 $201.1555
590+ $0.4273 $252.1070
785+ $0.3831 $300.7335
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